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2 edition of Coherent control of photocurrent in bulk semiconductors. found in the catalog.

Coherent control of photocurrent in bulk semiconductors.

Alain Hache

Coherent control of photocurrent in bulk semiconductors.

by Alain Hache

  • 255 Want to read
  • 29 Currently reading

Published .
Written in English

    Subjects:
  • Physics Theses

  • Edition Notes

    Thesis (Ph.D.), Dept. of Physics, University of Toronto

    ContributionsVan Driel, Henry (supervisor)
    The Physical Object
    Pagination101 p.
    Number of Pages101
    ID Numbers
    Open LibraryOL18552490M
    ISBN 100612276589

    (). Phase-coherent control of photocurrent directionality in semiconductors. (). Phase-controlled currents in semiconductors. (). Coherent control of photocurrent generation in bulk semiconductors. (). Quantum interference control of electrical currents in GaAs. ().Author: Matthew R. Harper. We characterize the manner in which the carrier-envelope phase of ultrashort pulses can control quantum interference of injected photocurrents in low-temperature-grown gallium arsenide. We verify the predicted linear and square-root dependences of the generated current on the average optical powers of the low (nu) and high (2nu) frequency wings of a pulse spectrum, respectively.

    We use two mutually coherent, harmonically related pulse trains to experimentally characterize quantum interference control (QIC) of injected currents in low-temperature-grown gallium arsenide. We observe real-time QIC interference fringes, optimize the QIC signal fidelity, uncover critical signal dependences regarding beam spatial position on the sample, measure signal dependences on the. coherent control processes which will be discussed here. 3. Coherent Control of Charge Oscillations in Semiconductor Double Wells Coherent charge oscillations in semiconductors pro- vided one of the first demonstrations that coherent carrier dynamics (transport) can be optically induced in semicon- .

    Similarities to coherent control experiments of interfering multiphoton transitions driven in semiconductors by two-color fields [] have also been pointed out. Here, we investigate lightwave-driven currents in gallium nitride in a new parameter : Fabian Langer, Yen-Po Liu, Zhe Ren, Vidar Flodgren, Chen Guo, Jan Vogelsang, Sara Mikaelsson, Ivan S.   Highlights A new approach to coherent control of transport via molecular junctions is introduced. Previously noted hurdles to experimental realization of optically manipulated nanoelectronics are bypassed. Essential are the use of semiconductor contacts and sub-bandgap frequencies. A density matrix formalism is introduced, which offers useful analytically soluble limits. A new phenomenon Cited by: 4.


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Coherent control of photocurrent in bulk semiconductors by Alain Hache Download PDF EPUB FB2

Rents from midgap impurities in semiconductors has been calculated [9]; and “atomiclike” coherent current genera-tion from quantum wells has been observed [10]. But it does not seem to be appreciated that substantial, coher-ently controlled current injection should be possible in a bulk, undoped semiconductor—even one with a center of.

Coherent Control of Photocurrent in Bulk Semiconductors Alain Haché A thesis submitted for the degree of Doaor of Philosophy, Department of Physics, University of Toronto, Coherent control of photocurrent via interband transitions in buUsemiconduc- tors is proposed and demonstrated in Ch Fermi's Golden Rule approach is usedCited by: 1.

Coherent control of photocurrent via interband transitions in bulk semiconductors is proposed and demonstrated in GaAs. A Fermi's Golden Rule approach is used to calculate the overall transition rate for simultaneous single- and two-photon excitation in direct band gap semiconductors using phase-related beams at frequencies ω and 2ω, with ℎomegaCited by: 1.

Coherent Control of Photocurrent Generation in Bulk Semiconductors - NASA/ADS We show theoretically that interband transitions in a bulk semiconductor via coherent one- and two-photon absorption leads to the formation of an electrical current whose direction is controlled by the relative phase of the by: BibTeX @MISC{Ors_coherentcontrol, author = {Semiconduct Ors and Alain Haché and Bibliothéque Nationale and Alain Haché}, title = {Coherent Control of Photocurrent in Bulk Semiconductors}, year = {}}.

The International Workshop on Coherent Control of Carrier Dynamics in Semiconductors was held May 19 to 22, at the University of Illinois at Chicago. Its intent was to bring together an international and interdisciplinary group of scientists to discuss recent progress, pertinent problems, and.

of carrier generation, including coherent processes, but this technique is rarely used for characterization of material properties. This approach should be established as it can be a powerful tool for the analysis of photocurrent dynamics in the ultrafast time domain, which cannot be achieved in a steady-state photocurrent control [19–21].

coherent control of photocurrent magnitude and direc- tionality in bulk, unbiased semiconductors via interband transitions is appealing both from a technological and a. coherent control of photocurrent magnitude and direc-tionality in bulk, unbiased semiconductors via interband transitions is appealing both from a technological and a scientific point of view.

Earlier [8,9] we showed in prin-ciple that control of current should be observable both in centrosymmetric and noncentrosymmetric semiconductors. We report generation of ballistic electric currents in unbiased epitaxial graphene at K via quantum interference between phase-controlled cross-polarized fundamental and second harmonic fs pulses.

The transient currents are detected via the emitted terahertz radiation. Because of graphene’s special structure symmetry, the injected current direction can be well controlled by the Cited by: Carrier Density Photon Absorption Peak Current Density Bulk Semiconductor Coherent Control These keywords were added by machine and not by the authors.

This process is experimental and the keywords may be updated as the learning algorithm : Henry M. van Driel, John E. Sipe, Alain Haché, James M.

Fraser. Subcycle polar asymmetry of the electric field is adjusted by changing the relative phase between superposed fundamental and second harmonic components. The resultant broken symmetry of the field profile is directly resolved via electro-optic sampling.

Access to such waveforms provides a direct route for control of low-energy degrees. The theoretical prediction of the coherent control of photocurrent generation in bulk semiconductors [1] has recently been experimentally confirmed for GaAs [2]. When two monochromatic beams of frequency ω and 2ω are incident on an intrinsic semiconductor, a photocurrent is generated whose direction and magnitude can be controlled by simply.

We present a brief overview of some of our theoretical studies of coherent control schemes in semiconductor heterostructures within Boltzmann-Bloch equations. The latter are obtained from Dyson’s equation within the Keldysh nonequilibrium Green’s function approach and allow a microscopic analysis of coherent control schemes in by: 1.

Phase-coherent control of photocurrent magnitude and directionality in semiconductors using lineraly chirped pulses is proposed and analysed. Measurable photocurrents can be generated for the pulsewidth shorter than the dephasing time of the excited by: 1.

Quantum interference between one- and two-photon absorption pathways allows coherent control of interband transitions in unbiased bulk semiconductors; carrier population, carrier spin polarization.

The coherent control of optical phonons has been experimentally demonstrated in various physical systems. While the transient dynamics for optical phonons can be explained by phenomenological Cited by: 8.

A few examples exist in the literature of coherent control of excitations in semiconductor nanostructures 1 and optoelectronic devices based on these materials 2, by: Specific manipulation of their interference allows for the coherent control of various phenomena.

In bulk materials, coherent photocurrent control has recently been demonstrated with a single beam relying on the interference between absorption pathways involving different linear polarizations [1].

This doesn't survive for bulk cubic semiconductors. Coherent control of carrier population and spin in ()‐GaAs. Martin J. Stevens.

Laboratory for Photonics & Quantum Electronics, IATL, University of Iowa, Iowa City,IowaUSA Cited by:. Quantum interference between one- and two-photon absorption pathways allows coherent control of interband transitions in unbiased bulk semiconductors; carrier population, carrier spin polarization, photocurrent injection, and spin current injection may all be : R.

D. R. Bhat and J. E. Sipe. The spin of a carrier trapped in a self-assembled quantum dot has the potential to be a robust optically active qubit that is compatible with existing III–V semiconductor device.The field of ultrafast spectroscopy of semiconductors and their nanostruc tures continues to be an active field of research.

Exciting new developments have taken place since the first edition of this book was completed in This revised edition includes a discussion of many of .